Dry etching

MIMENTO technology center has a resource dedicated to the dry etching of different materials (plasma etching). A key feature of plasma etching is the ability to etch materials, isotropic or anisotropic, independent of the crystal orientation.

In plasma etching, the gas entering the reactor will be ionized and fragmented by electric or magnetic excitation, generating electrons, ions, radicals and molecule fragments. By diffusion or drift they reach the sample surface, where they undergo chemical (radicals, molecule fragments) or physical (energetic ions) interactions with the sample. In this way, the sample surface can be etched.

By choosing the appropriate reactive gases (SF6, CF4, C4F8, Ar….), a wide range of materials can be etched (Silicon, Quartz, Glass, LiNbO3, ...).

Depending on the chosen process, the etched depth varies from few nanometers to the through etching of the wafer.

 

Resource contact:

Djaffar BELHARET
03 81 66 55 83
djaffar.belharet [at] femto-st.fr
Personal page: https://www.femto-st.fr/fr/personnel-femto/djaffarbelharet
Samuel QUESTE
03 63 08 66 47
samuel.queste [at] femto-st.fr
Personal page: https://www.femto-st.fr/fr/personnel-femto/samuelqueste

 

Asher & Surface treatment system

Nanoplas
DSB 6000
Use:
> PR stripping
> Surface treatment, prep-aration, functionalization
Technical specifications

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Stripping tool

Muegge
R3T
Use:
> Thick photoresist remover (SU8), descum and surface Activation

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RIE-CCP system

Plassys Use:
> Nano-metric & sub-µ etching on variety of materials (dielectrics, SC, piezo-electric ...)
Technical specifications

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RIE-CCP system

CORIAL
200-R
Use:
> Nano-metric & sub-µ etching on variety of materials
Technical specifications

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Si DRIE-ICP system 4’’

Alcatel
601E
Use:
> Si deep etching
> Si isotropic etching
Technical specifications

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Si DRIE-ICP system 4’’

SPTS
Rapier
Use:
> Si deep, sub-micronic & isotropic etching
> Vias etching
Technical specifications

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Si DRIE-ICP system 6’’

SPTS
Rapier Omega C2L
Use:
> Si deep, sub-micronic & isotropic etching
> Vias etching
Technical specifications

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Multi-material DRIE-ICP system 4’’

STS
APS
Use:
> Dielectric, isolated & piezo-electric materials etching
Technical specifications

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Chlorine ICP system 4’’

Trikon
Omega 201
Use:
> Metallic materials & SC materials etching
Technical specifications

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Dry etching overview

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Realisations

Micro-assembly of micro-optical components
Electrostatic X-Y microactuator
Phononic crystals