Dry etching

MIMENTO technology center has a resource dedicated to the dry etching of different materials (plasma etching). A key feature of plasma etching is the ability to etch materials, isotropic or anisotropic, independent of the crystal orientation.

In plasma etching, the gas entering the reactor will be ionized and fragmented by electric or magnetic excitation, generating electrons, ions, radicals and molecule fragments. By diffusion or drift they reach the sample surface, where they undergo chemical (radicals, molecule fragments) or physical (energetic ions) interactions with the sample. In this way, the sample surface can be etched.

By choosing the appropriate reactive gases (SF6, CF4, C4F8, Ar….), a wide range of materials can be etched (Silicon, Quartz, Glass, LiNbO3, ...).

Depending on the chosen process, the etched depth varies from few nanometers to the through etching of the wafer.

 

Resource contact:

Djaffar BELHARET
03 81 66 55 83
djaffar.belharet [at] femto-st.fr
Personal page: https://www.femto-st.fr/fr/personnel-femto/djaffarbelharet
Samuel QUESTE
03 63 08 66 47
samuel.queste [at] femto-st.fr
Personal page: https://www.femto-st.fr/fr/personnel-femto/samuelqueste

 

Asher & Surface treatment system

Nanoplas DSB 6000Use:
> PR stripping
> Surface treatment, prep-aration, functionalization
Technical specifications

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Vapor HF

SPTS uEtchUse:
> Etched materials: Thermal oxide, TEOS, SOI bonded oxide
SPTS uEtchTechnical specifications

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Stripping tool

Muegge R3TUse:
> Thick photoresist remover (SU8), descum and surface Activation
Technical specifications

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Stripping tool

Tepla GIGABatch360MUse:
> PR striping
> Surface activation
Tepla GIGABatch360MTechnical specifications

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RIE-CCP system

CORIAL 200-RUse:
> Nano-metric & sub-µ etching on variety of materials
Technical specifications

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Si DRIE-ICP system 4’’

SPTS RapierUse:
> Si deep, sub-micronic & isotropic etching
> Vias etching
Technical specifications

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Si DRIE-ICP system 6’’

SPTS Rapier Omega C2LUse:
> Si deep, sub-micronic & isotropic etching
> Vias etching
Technical specifications

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Multi-material DRIE-ICP system 4’’

STS APSUse:
> Dielectric, isolated & piezo-electric materials etching
Technical specifications

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ICP-RIE etch system

Corial 210ILUse:
> Nano-metric & submicronic etching on variety of materials
> Metals: Al, Cr, Ni, Ti...
> III-V materials: GaAs...
Corial 210ILTechnical specifications

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Dry etching overview

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Realisations

Micro-assembly of micro-optical components
Electrostatic X-Y microactuator
Phononic crystals